? semiconductor components industries, llc, 2006 april, 2006 ? rev. 5 1 publication order number: 1N5913B/d 1N5913B series 3 w do?41 surmetic 30 zener voltage regulators this is a complete series of 3 w zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon?oxide passivated junctions. all this in an axial?lead, transfer?molded plastic package that offers protection in all common environmental conditions. features ? zener voltage range ? 3.3 v to 200 v ? esd rating of class 3 (>16 kv) per human body model ? surge rating of 98 w @ 1 ms ? maximum limits guaranteed on up to six electrical parameters ? package no larger than the conventional 1 w package ? pb?free packages are available mechanical characteristics case: void free, transfer?molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 260 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l = 75 c, lead length = 3/8 derate above 75 c p d 3 24 w mw/ c steady state power dissipation @ t a = 50 c derate above 50 c p d 1 6.67 w mw/ c operating and storage temperature range t j , t stg ?65 to +200 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information 1n59xxb, g axial lead (pb?free) 2000 units/box 1n59xxbrl, g axial lead (pb?free) axial lead case 59 plastic style 1 6000/tape & ree l cathode anode marking diagram ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specificatio n brochure, brd8011/d. http://onsemi.com a = assembly location 1n59xxb = device number yy = year ww = work week = pb?free package (note: microdot may be in either location) a 1n 59xxb yyww
zener voltage regulator i f v i i r i zt v r v z v f 1N5913B series http://onsemi.com 2 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 200 madc for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current
1N5913B series http://onsemi.com 3 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 200 madc for all types) device ? (note 1) device marking zener voltage (note 2) zener impedance (note 3) leakage current i zm v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r min nom max ma ma a max volts ma 1N5913B, g 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454 1n5917b, g 1n5917b 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319 1n5919b, g 1n5919b 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1n5920b, g 1n5920b 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1n5921b, g 1n5921b 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1n5923b, g 1n5923b 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1n5924b, g 1n5924b 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164 1n5925b, g 1n5925b 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150 1n5926b, g 1n5926b 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1n5927b, g 1n5927b 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125 1n5929b, g 1n5929b 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100 1n5930b, g 1n5930b 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93 1n5931b, g 1n5931b 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83 1n5932b, g 1n5932b 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75 1n5933b, g 1n5933b 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68 1n5934b, g 1n5934b 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62 1n5935b, g 1n5935b 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1n5936b, g 1n5936b 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50 1n5937b, g 1n5937b 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1n5938b, g 1n5938b 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41 1n5940b, g 1n5940b 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1n5941b, g 1n5941b 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31 1n5942b, g 1n5942b 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1n5943b, g 1n5943b 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26 1n5944b, g 1n5944b 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24 1n5946b, g 1n5946b 71.25 75 78.75 5.0 140 2000 0.25 1 56 20 1n5947b, g 1n5947b 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18 1n5948b, g 1n5948b 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1n5950b, g 1n5950b 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1n5951b, g 1n5951b 114 120 126 3.1 380 4500 0.25 1 91.2 12 1n5952b, g 1n5952b 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1n5953b, g 1n5953b 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1n5954b, g 1n5954b 152 160 168 2.3 700 6500 0.25 1 121.6 9 1n5955b, g 1n5955b 171 180 189 2.1 900 7000 0.25 1 136.8 8 1n5956b, g 1n5956b 190 200 210 1.9 1200 8000 0.25 1 152 7 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. ?the ?g?? suffix indicates pb?free package available. 1. tolerance and type number designation tolerance designation ? device tolerance of 5% are indicated by a ?b? suffix. 2. zener voltage (v z ) measurement on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. 3. zener impedance (z z ) derivation the zener impedance is derived from 60 seconds ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk .
1N5913B series http://onsemi.com 4 figure 1. power temperature derating curve t l , lead temperature ( c) 0 20 40 60 200 80 100 120 140 160 180 0 1 2 3 4 5 l = 1/8 l = 3/8 l = 1 l = lead length to heat sink p d , steady state dissipation (watts) t, time (seconds) 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d =0.5 0.2 0.1 0.05 0.01 d = 0 duty cycle, d =t 1 /t 2 jl (t, d) transient thermal resistance junction-to-lead ( c/w) p pk t 1 note: below 0.1 second, thermal response curve is applicable to any lead length (l). single pulse t jl = jl (t)p pk repetitive pulses t jl = jl (t,d)p pk t 2 0.02 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk 1 2 5 10 20 50 100 200 400 1000 0.0003 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 t a = 125 c t a = 125 c nominal v z (volts) as specified in elec. char. table figure 2. typical thermal response l, lead length = 3/8 inch figure 3. maximum surge power figure 4. typical reverse leakage i r , reverse leakage ( adc) @ v r rectangular nonrepetitive waveform t j =25 c prior to initial pulse
1N5913B series http://onsemi.com 5 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = la p d + t a la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for la will vary and depends on the device mounting method. la is generally 30?40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + t jl t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for a train of power pulses (l = 3/8 inch) or from figure 10 for dc power. t jl = jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( t j ) may be estimated. changes in voltage, v z , can then be found from: v = vz t j vz , the zener voltage temperature coefficient, is found from figures 5 and 6. under high power-pulse operation, the zener voltage will vary with time and may also be af fected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 2 should not be used to compute surge capability. sur ge limitations are given in figure 3. they are lower than would be expected by considering only junction temperature, as current crowding ef fects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 3 be exceeded.
1N5913B series http://onsemi.com 6 figure 5. units to 12 volts figure 6. units 10 to 400 volts figure 7. v z = 3.3 thru 10 volts figure 8. v z = 12 thru 82 volts figure 9. v z = 100 thru 400 volts figure 10. t ypical thermal resistance zener voltage versus zener current (figures 7, 8 and 9) temperature coefficient ranges (90% of the units are in the ranges indicated) v z , zener voltage @ i zt (volts) 34 5 6 789101112 10 8 6 4 2 0 ?2 ?4 range , temperature coefficient (mv/ c) @ i zt vz 1000 500 200 100 50 20 10 10 20 50 100 200 400 1000 v z , zener voltage @ i zt (volts) , temperature coefficient (mv/ c) @ i zt vz 01 2 3 4 5 6 7 8910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) i , zener current (ma) z 2 5 3 0 10 203040 50 607080 90100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 100 200 300 400 250 350 150 10 1 0.5 0.2 0.1 v z , zener voltage (volts) 2 5 i , zener current (ma) z 0 10 20 30 40 50 60 70 80 l, lead length to heat sink (inch) primary path of conduction is through the cathode lead 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 t l jl , junction-to-lead thermal resistance l l ( c/w)
1N5913B series http://onsemi.com 7 package dimensions axial lead case 59?10 issue u b d k k f f a dim min max min max millimeters inches a 4.10 5.20 0.161 0.205 b 2.00 2.70 0.079 0.106 d 0.71 0.86 0.028 0.034 f ??? 1.27 ??? 0.050 k 25.40 ??? 1.000 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with jedec do?41 outline shall apply 4. polarity denoted by cathode band. 5. lead diameter not controlled within f dimension. polarity indicator optional as needed (see styles) style 1: pin 1. cathode (polarity band) 2. anode
1N5913B series http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 1N5913B/d surmetic is a trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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